Reliability considerations for parallel performance of semiconductor switches in high-power switching power supplies

IEEE Transactions on Industrial Electronics

Volumn 56, Issue 6, 2009, Pages 2133-2139

  Abdi, Babak ^a,b   Ranjbar, Amir H ^b   Gharehpetian, Gevorg B ^b   Milimonfared, Jafar ^b  

^a ISLAMIC AZAD UNIVERSITY   (Iran)

^b AMIRKABIR UNIVERSITY OF TECHNOLOGY   (Iran)

Author keywords

Boost converter; Integrated power module (IPM); Paralleling; Reliability

Indexed keywords

BOOST CONVERTER; CURRENT RATING; HIGH-POWER SWITCHING POWER SUPPLY; INTEGRATED POWER MODULE; INTEGRATED POWER MODULE (IPM); PARALLEL PERFORMANCE; PARALLELING; RELIABILITY CALCULATION;

ACTIVE FILTERS; BIPOLAR TRANSISTORS; ELECTRIC CONVERTERS; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC SWITCHGEAR; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); OVERCURRENT PROTECTION; PERMANENT MAGNETS; POWER ELECTRONICS; SEMICONDUCTOR SWITCHES; SWITCHES;

RELIABILITY;

EID: 67649305134     PISSN: 02780046     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIE.2009.2014306     Document Type: Article

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