Evaluation of parallel and series connection of silicon carbide schottky barrier diode (SiC-SBD)

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 4, Issue , 2004, Pages 2971-2976

  Kodani, Kazuya ^a   Matsumoto, Toshiaki ^a   Saito, Suzuo ^a   Takao, Kazuto ^b   Mogi, Takahiro ^b   Yatsuo, Tsutomu ^b   Arai, Kazuo ^b  

^a TOSHIBA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT SHARING; INVERTER LOSSES; JUNCTION DIODES; VOLTAGE SHARING;

CAPACITORS; ELECTRIC BREAKDOWN; ELECTRIC INVERTERS; ELECTRIC LOSSES; ELECTRIC POTENTIAL; HEAT RESISTANCE; POWER ELECTRONICS; RESISTORS; SILICON CARBIDE;

SCHOTTKY BARRIER DIODES;

EID: 8744313862     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2004.1355307     Document Type: Conference Paper

References (7)

1. H. Matsunami, Technology of Semiconductor SiC and Its Application, nikkan kogyo Shimbun Ltd., 2003
2. K. Arai, S.Yoshida, The Foundation and Application of SiC Power Devices, Ohmsha Ltd., 2003
3. H.R. Chang, R.N. Gupta, C. Winterhalter, and E. Hanna, "Comparison of 1200 V silicon carbide Schottky diodes and silicon power diodes", Energy Conversion Engineering Conference and Exhibit (IECEC2000) 35th Intersociety, pp174-179 vol.1, July 2000
4. th European Conference on Power Electronics and Applications (EPE2001), 2001
5. Infineon Technologies Data Sheet SIDC020D60SIC2, Infineon Technologies, Edition, 30, 08, 2000.
6. Toshiba Corporation Data Sheet MG50J2YS50, Toshiba Corporation, Edition 1, 4, 2001
7. Toshiba Corporation Data Sheet MG50Q2YS50, Toshiba Corporation, Edition 1, 4, 2001