Parallel strings of IGBTs in short circuit transients: Analysis of the parameter influence and experimental behavior

IECON Proceedings (Industrial Electronics Conference)

Volumn 1, Issue , 2002, Pages 555-560

  Musumeci, S ^a   Pagano, R ^a   Raciti, A ^a   Frisina, F ^b   Melito, M ^b  

^a UNIVERSITY OF CATANIA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

FAULT UNDER LOAD; HARD SWITCHING FAULT; SHORT CIRCUIT TESTING; SHORT CIRCUIT TRANSIENT;

CAPACITANCE; COMPUTER SIMULATION; ELECTRON DEVICE TESTING; FAILURE ANALYSIS; INDUCTANCE; SHORT CIRCUIT CURRENTS; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS; TRANSCONDUCTANCE; TRANSIENTS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0036958052     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IECON.2002.1187568     Document Type: Conference Paper

References (6)

1. G. Belverde., M. Melito, S. Musumeci, A. Raciti, "Improvement of the Parallel Behavior of IGBT Connections by Gate Control Circuit," Conf. Rec. EPE 2001, Gratz, Austria, 27-29 August 2001, pp. 1-10.
2. P. R. Palmer, H. S. Rajamani and J.C. Joyce, "Behaviour of IGBT Modules Under Short Circuit Conditions," Conference Record of the 2000 IEEE Industry Applications Annual Meeting, October 2000, Rome, Italy, pp. 3010-3015.
3. J. B. Forsythe, "Paralleling of Power MOSFETs for Higher Power Output," IEEE Transactions on Industry Applications, 1981, pp. 777-795.
4. P.O. Jeannin, M. Akhabari, J.L. Schanen, "Influence of Stray Inductance on Current Sharing during Switching Transitions in Parallel Semiconductors", Conf. Proc. of EPE '99, Lausanne, Switzerland, September 1999, pp. 1-10.
5. S. Konrad, I. Zverev, "Protection Concept for Rugged IGBT Modules", EPE Journal, December 1996, Vol. 6, No. 3-4, pp. 11-19.
6. B. J. Baliga, Modern Power Devices. New York: J Wiley & Sons, 1987.