Hysteresis effects by source/drain interdigitated-finger geometry in 6,13-Bis(triisopropylsilylethynyl)pentacene thin-film transistors

Electrochemical and Solid-State Letters

Volumn 12, Issue 8, 2009, Pages

  Kwon, Jae Hong ^a,b   Shin, Sang Il ^a   Choi, Jinnil ^a   Chung, Myung Ho ^a   Ryu, Hyeyeon ^b   Zschieschang, Ute ^b   Klauk, Hagen ^b   Anthony, John E ^c   Ju, Byeong Kwon ^a  

^a Korea University   (South Korea)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c UNIVERSITY OF KENTUCKY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING/DETRAPPING; DEVICE PARAMETERS; DROP-CASTING; ELECTRICAL PROPERTY; FIELD-EFFECT MOBILITIES; FINGER ELECTRODE; GATE CURRENT; HYSTERESIS EFFECT; ON/OFF CURRENT RATIO; ORGANIC THIN FILM TRANSISTORS; PENTACENE; PENTACENE THIN-FILM TRANSISTORS; TRANSFER CHARACTERISTICS;

ELECTRIC PROPERTIES; HYSTERESIS; THIN FILM DEVICES; THIN FILM TRANSISTORS;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 67649226892     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3131744     Document Type: Article

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