A non-local gate current and oxide trapping charge generation model for lightly doped drain and single-drain nMOSFETs

Solid-State Electronics

Volumn 44, Issue 7, 2000, Pages 1305-1314

  Jang, Sheng Lyang ^a   Sheu, Chorng Jye ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; CURRENT DENSITY; ELECTRON TRAPS; OXIDES; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

LIGHTLY DOPED DRAIN (LDD); QUANTUM MECHANICAL TUNNELING EFFECTS;

MOSFET DEVICES;

EID: 0033743736     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00019-8     Document Type: Article

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