A Novel procedure to obtain nanocrystalline diamond/porous silicon composite by chemical vapor deposition/infiltration processes

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 6, 2009, Pages 3877-3882

  Miranda, C ^a   Azevedo, A F ^a   Baldan, M R ^a   Beloto, A F ^a   Ferreira, N G ^a  

^a INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

Author keywords

Acetonitrile; Chemical vapor infiltration; Nanodiamond; Porous silicon; Reticulated vitreous carbon

Indexed keywords

ANODIZATION; AVERAGE SIZE; CARBON GROWTH; CARBON SOURCE; CHEMICAL VAPOR; DIAMOND GRAINS; DIAMOND STRUCTURES; DIFFRACTION PEAKS; ETCHING PROCESS; ETHANOL SOLUTIONS; FIELD EMISSION GUNS; GROWTH MECHANISMS; HOT-FILAMENT REACTORS; METHANE CONCENTRATIONS; N TYPE SILICON; NANOCRYSTALLINE; NANOCRYSTALLINE DIAMOND FILMS; NANODIAMOND; NANOGRAMS; NCD FILMS; RAMAN SPECTRA; RETICULATED VITREOUS CARBON; SEM; SEM IMAGE; SOLID SOURCES; SURFACE TEXTURES; TRANS-POLYACETYLENE; TWO-COMPONENT;

ACETONITRILE; BENDING STRENGTH; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; DIAMONDS; DIFFRACTION; EMISSION SPECTROSCOPY; ETHANOL; FIELD EMISSION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HONEYCOMB STRUCTURES; HYDROFLUORIC ACID; METHANATION; METHANE; NANOCRYSTALLINE SILICON; SCANNING ELECTRON MICROSCOPY; SEEPAGE; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SOIL MECHANICS; SUBSTRATES; VAPORS; X RAY DIFFRACTION ANALYSIS;

POROUS SILICON;

EID: 67649214655     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.NS83     Document Type: Conference Paper

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