Microstructure and its effect on field electron emission of grain-size-controlled nanocrystalline diamond films

Journal of Applied Physics

Volumn 88, Issue 5, 2000, Pages 2967-2974

  wu, Kehui ^a   Wang, E G ^a   Cao, Z X ^a   Wang, Z L ^b   Jiang, X ^c  

^a INSTITUTE OF PHYSICS   (China)

^b Georgia Institute of Technology   (United States)

^c FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COLD CATHODE TUBES; DIAMOND FILMS; FIELD EMISSION; FIELD EMISSION CATHODES; FIELD EMISSION DISPLAYS; GRAIN SIZE AND SHAPE; GRAPHITE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOCRYSTALLINE MATERIALS; NANOCRYSTALS; PHASE STRUCTURE; SECONDARY ION MASS SPECTROMETRY;

COLD CATHODE MATERIAL; FIELD ELECTRON EMISSIONS; FIELD EMISSION APPLICATION; FIELD EMISSION PROPERTY; MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION; NANO-CRYSTALLINE DIAMONDS; NANOCRYSTALLINE DIAMOND FILMS; SECONDARY ION MASS SPECTROSCOPY;

ELECTRON EMISSION;

EID: 0006105923     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.1287602     Document Type: Article

References (25)

1. F. J. Himpsel, J. A. Knapp, J. A. VanVechten, and D. E. Eastman, Phys. Rev. B PRBMDO 20, 624 (1979).
2. N. S. Xu, Y. Tzeng, and R. V. Latham, J. Phys. D JPAPBE 26, 1776 (1993).
3. Y.-H. Chen, C.-T. Hu, and I.-N. Lin, J. Appl. Phys. JAPIAU 84, 3890 (1998).
4. M. W. Geis, J. C. Twichell, N. N. Efremow, K. Krohn, and T. M. Lyszczarz, Appl. Phys. Lett. APPLAB 68, 2294 (1996).
5. T. Yamada, H. Ishihara, K. Okano, S. Koizumi, and J. Itoh, J. Vac. Sci. Technol. B JVTBD9 15, 1678 (1997).
6. K. Okano, S. Koizumi, S. Ravi, P. Silva, and G. A. J. Amaratunga, Nature (London) NATUAS 381, 140 (1996).
7. W. Zhu, G. P. Kochanski, and S. Jin, Science SCIEAS 282, 1471 (1998).
8. N. Kumar and H. Schmidt, Semicond. Sci. Technol. SSTEET 71, 73 (1995).
9. A. Wisitsora-at, W. P. Kang, J. L. Davidson, and D. V. Kerns, Appl. Phys. Lett. APPLAB 71, 3394 (1997).
10. P. W. May, S. Hohn, M. N. R. Ashfold, W. N. Wang, N. A. Fox, T. J. Davis, and J. W. Steeds, J. Appl. Phys. JAPIAU 84, 1618 (1998).
11. V. F. Dorfman, Thin Solid Films THSFAP 212, 267 (1992).
12. D. M. Bhusari, J. R. Yang, T. Y. Yang, S. T. Lin, K. H. Chen, and L. C. Chen, Solid State Commun. SSCOA4 107, 301 (1998).
13. D. Zhou, A. R. Krauss, L. C. Qin, T. G. McCauley, D. M. Gruen, T. D. Corrigan, R. P. H. Chang, and H. Gnaser, J. Appl. Phys. JAPIAU 82, 4546 (1997).
14. D. Zhou, A. R. Krauss, T. D. Corrigan, T. G. McCauley, R. P. H. Chang, and D. M. Gruen, J. Electrochem. Soc. JESOAN 144, L224 (1997).
15. Kehui Wu, E. G. Wang, J. Chen, and N. S. Xu, J. Vac. Sci. Technol. B JVTBD9 17, 1059 (1999).
16. A. Guinier, X-Ray Diffraction (W. H. Freeman, San Francisco, 1963), 121.
17. W. A. Yarbrough and R. Messier, Science SCIEAS 247, 3842 (1990).
18. A. A. Talin, L. S. Pan, K. F. McCarty, and T. E. Felter, Appl. Phys. Lett. APPLAB 69, 3842 (1996).
19. W. M. Sebert, E. Worner, F. Fuchs, C. Wild, and P. Koidl, Appl. Phys. Lett. APPLAB 68, 759 (1996).
20. R. Locher, C. Wild, N. Herres, D. Behr, and P. Koidl, Appl. Phys. Lett. APPLAB 65, 34 (1994).
21. S. Jin and T. D. Mowtakas, Appl. Phys. Lett. APPLAB 65, 403 (1996).
22. S. Bohr, R. Hanbner, and B. Lov, Appl. Phys. Lett. APPLAB 68, 1075 (1996).
23. M. W. Geis, J. C. Twichell, and T. M. Lyszczarz, J. Vac. Sci. Technol. B JVTBD9 14, 2060 (1996).
24. C. Bandis and B. B. Pate, Appl. Phys. Lett. APPLAB 69, 366 (1996).
25. K. Okano, T. Yamada, A. Sawabe, S. Koizumi, R. Matsuda, C. Bandis, W. Chang, and B. B. Pate, Appl. Surf. Sci. ASUSEE 146, 274 (1999).