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Volumn 13, Issue 4-8, 2004, Pages 834-838

Chemical vapor infiltration (CVI)-Part I: A new technique to achieve diamond composites

Author keywords

Chemical vapor infiltration or interface structure; Electronic device structures; Hot filament CVD; Silicon carbide

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; COMPOSITE MATERIALS; FLOW OF FLUIDS; HEAT SINKS; SUBSTRATES; TRIBOLOGY;

EID: 2442440944     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2003.10.041     Document Type: Article
Times cited : (25)

References (14)
  • 13
    • 0009588442 scopus 로고    scopus 로고
    • A. Paoletti, & A. Tucciarone (Eds.), Amsterdam: IOS Press
    • Angus J.C. Evans E.A. Paoletti A. Tucciarone A. The Physics of Diamond 1997 31-44 IOS Press Amsterdam
    • (1997) The Physics of Diamond , pp. 31-44
    • Angus, J.C.1    Evans, E.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.