Role of interfacial dipole layer for energy-level alignment at organic/metal interfaces

Organic Electronics

Volumn 10, Issue 5, 2009, Pages 990-993

  Tanaka, Yusuke ^a   Kanai, Kaname ^b   Ouchi, Yukio ^a   Seki, Kazuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b OKAYAMA UNIVERSITY   (Japan)

Author keywords

Energy level alignment; Fermi level pinning; Organic semiconductor interface; Slope (S) parameter; Spontaneous charge transfer; Vacuum level shift

Indexed keywords

CHARGE TRANSFER; FERMI LEVEL; METALS; MOLECULAR ORBITALS; SUBSTRATES;

ENERGY LEVEL ALIGNMENT; FERMI LEVEL PINNING; SEMICONDUCTOR INTERFACES; SLOPE (S) PARAMETER; VACUUM LEVEL SHIFT;

ALIGNMENT;

EID: 67649207601     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2009.05.014     Document Type: Article

References (21)

1. Ishii H., Sugiyama K., Ito E., and Seki K. Adv. Mater. 11 (1999) 605
2. Sze S.M. Physics of Semiconductor Devices. second ed. (1981), Wiley, New York
3. Vázquez H., Oszwaldowski R., Pou P., Ortega J., Pérez R., Flores F., and Kahn A. Europhys. Lett. 65 (2004) 802
4. Vázquez H., Gao W., Flores F., and Kahn A. Phys. Rev. B 71 (2005) 041306
5. Tang J.X., Lee C.S., and Lee S.T. Appl. Phys. Lett. 87 (2005) 252110
6. Zhou Y.C., Tang J.X., Liu Z.T., Lee C.S., and Lee S.T. Appl. Phys. Lett. 93 (2008) 093502
7. Mönch W. Appl. Phys. Lett. 88 (2006) 112116
8. Tengstedt C., Osikowicz W., Salaneck W.R., Parker I.D., Hsu C.-H., and Fahlman M. Appl. Phys. Lett. 88 (2006) 053502
9. Fahlman M., Crispin A., Crispin X., Henze S.K.M., de Jong M.P., Osikowicz W., Tengstedt C., and Salaneck W.R. J. Phys.: Condens. Matter. 19 (2007) 183202
10. Fukagawa H., Kera S., Kataoka T., Hosoumi S., Watanabe Y., Kudo K., and Ueno N. Adv. Mater. 19 (2007) 665
11. Koch N., and Vollmer A. Appl. Phys. Lett. 89 (2006) 162107
12. Hayashi N., Ishii H., Ouchi Y., and Seki K. J. Appl. Phys. 92 (2002) 3784
13. Yamane H., Yabuuchi Y., Fukagawa H., Kera S., Okudaira K.K., and Ueno N. J. Appl. Phys. 99 (2006) 093705
14. Peisert H., Knupfer M., Schwieger T., Auerhammer J.M., Golden M.S., and Fink J. J. Appl. Phys. 91 (2002) 15
15. Tang J.X., Lee C.S., and Lee S.T. Appl. Surf. Sci. 252 (2006) 3948
16. Song F., Huang H., Dou W., Zhang H., Hu Y., Qian H., Li H., He P., Bao S., Chen Q., and Zhou W. J. Phys.: Condens. Matter 19 (2007) 136002
17. Murdey R., Sato N., and Bouvet M. Mol. Cryst. Liq. Cryst. 455 (2006) 211
18. Y. Tanaka, K. Kanai, Y. Ouchi, K. Seki, Mater. Res. Soc. Symp. Proc., submitted to publication.
19. Duhm S., Gerlach A., Salzmann I., Bröker B., Johnson R.L., Schreiber F., and Koch N. Org. Electron. 9 (2008) 111
20. Tang J.X., Lee C.S., Lee S.T., and Xu Y.B. Chem. Phys. Lett. 396 (2004) 92
21. Toyoshima S., Kuwabara K., Sakurai T., Taima T., Sato K., Kato H., and Akimoto K. J. Appl. Phys. 46 (2007) 2692