Electronic structure of bathocuproine on metal studied by ultraviolet photoemission spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2692-2695

  Toyoshima, Susumu ^a,b   Kuwabara, Kazuhisa ^a,b   Sakurai, Takeaki ^a   Taima, Tetsuya ^b   Saito, Kazuhiro ^b   Kato, Hiroo ^c   Akimoto, Katsuhiro ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c HIROSAKI UNIVERSITY   (Japan)

Author keywords

Bathocuproine; Buffer layer; Interface state; Organic light emitting diode; Organic solar cell; Ultraviolet photoemission spectroscopy; Work function

Indexed keywords

BUFFER LAYERS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; FERMI LEVEL; ORGANIC LIGHT EMITTING DIODES (OLED); SCHOTTKY BARRIER DIODES; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;

BATHOCUPROINE; ENERGY DIFFERENCE; INTERFACE STATES; ORGANIC SOLAR CELL;

MOLECULAR STRUCTURE;

EID: 34547855554     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2692     Document Type: Article

References (18)

1. H. Ishii, K. Sugiyama, E. Ito, and K. Seki: Adv. Mater. 11 (1999) 605.
2. H. Ishii, H. Oji, E. Ito, N. Hayashi D. Yoshimura, and K. Seki: J. Lumin. 87-89 (2000) 61.
3. H. Ishii, N. Hayashi, E. Ito, Y. Washizu, K. Sugi, Y. Kimura, M. Niwano, Y. Ouchi, and K. Seki: Phys. Status Solidi A 201 (2004) 1075.
4. Q. L. Song, F. Y. Li, H. Yang, H. R. Wu, X. Z. Wang, W. Zhou, J. M. Zhao, X. M. Ding, C. H. Huang, and X. Y. Hou: Chem. Phys. Lett. 416 (2005) 42.
5. Y. Wang, F. Teng, Q. Zhou, and Y. Wang: Appl. Surf. Sci. 252 (2006) 2355.
6. J. Tardy, M. B. Khalifa, and D. Vaufrey: Mater. Sci. Eng. C 26 (2006) 196.
7. Y. Kishigami, K. Tsubaki, Y. Kondo, and J. Kido: Synth. Met. 153 (2005) 241.
8. J. Xue, S. Uchida, B. P. Rand, and S. R. Forrest: Appl. Phys. Lett. 85 (2004) 5757.
9. T. Taima, M. Chikamatsu, Y. Yoshida, K. Saito, and K. Yase: Appl. Phys. Lett. 85 (2004) 641.2.
10. T. Taima, S. Toyoshima, K. Hara, K. Saito, and K. Yase: Jpn. J. Appl. Phys. 45 (2006) L217.
11. J. Kido and T. Matsumoto: Appl. Phys. Lett. 73 (1998) 2866.
12. D. F. O'Brien, M. A. Baldo, M. E. Thompson, and S. R. Forrest: Appl. Phys. Lett. 74 (1999) 442.
13. Y. Kijima, N. Asai, and S. Tamura: Jpn. J. Appl. Phys. 38 (1999) 5274.
14. R. S. Deshpande, V. Bulović and S. R. Forrest: Appl. Phys. Lett. 75 (1999) 888.
15. P. Peumans, V. Bulović, and S. R. Forrest: Appl. Phys. Lett. 76 (2000) 2650.
16. B. P. Rand, J. Xue, F. Yang, and S. R. Forrest: Appl. Phys. Lett. 87 (2005) 233508.
17. Y. Zou, L. Kilian, A. Schöll, Th. Schmidt, R. Fink, and E. Umbanch: Surf. Sci. 600 (2006) 1240.
18. S. M. Sze: Physics of Semiconductor Devices (Wiley, New York, 1995) Chap. 8.