Nanostructural characteristics and mechanical properties of low temperature plasma enhanced chemical vapor deposited silicon nitride thin films

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 6, 2009, Pages 3734-3741

  Huang, H ^a   Dell, J M ^b   Liu, S ^a  

^a UNIVERSITY OF QUEENSLAND   (Australia)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

Chemical bond; Mechanical property; Nanomechanical test; Nanostructure; Silicon nitride film

Indexed keywords

AMORPHOUS STRUCTURES; ATOMIC SCALE; CHEMICAL BONDING STRUCTURES; CHEMICAL VAPOR DEPOSITED; CREEP BEHAVIORS; DEPOSITION TEMPERATURES; FOURIER; FRICTIONAL RESISTANCE; FTIR; HYDROGEN CONCENTRATION; INFRARED TRANSMISSION SPECTRA; LOW TEMPERATURE PLASMAS; LOW TEMPERATURES; NANO-SCRATCH; NANOMECHANICAL TEST; NANOSTRUCTURAL CHARACTERISTICS; PECVD SILICON NITRIDE; PHYSICAL DEFECTS; SILICON NITRIDE FILM; SILICON NITRIDE THIN FILMS; STRONG CORRELATION;

CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FRICTION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROGEN; MECHANICAL PROPERTIES; NANOSTRUCTURES; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; THIN FILMS;

AMORPHOUS FILMS;

EID: 67649206109     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.NS59     Document Type: Conference Paper

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