The morphology of silicon nanowires grown in the presence of trimethylaluminium

Nanotechnology

Volumn 20, Issue 24, 2009, Pages

  Oehler, F ^a   Gentile, P ^a   Baron, T ^b   Hertog, M Den ^a   Rouviere J ^a   Ferret, P ^a  

^a CEA GRENOBLE   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BRANCHED GROWTH; CARRIER GAS; CHEMICAL VAPOUR DEPOSITION; ENHANCED SURFACE; GROWTH MODES; MORPHOLOGY CHANGES; NANOTREES; SILICON NANOWIRES; SUBSTRATE TEMPERATURE; TRIMETHYLALUMINIUM; VLS GROWTH;

ELECTRIC WIRE; GOLD DEPOSITS; MORPHOLOGY; NANOWIRES; NEEDLES; SILICON; THERMOANALYSIS;

CHEMICAL VAPOR DEPOSITION;

ALUMINUM; GOLD; HYDROGEN; NANOWIRE; SILANE; SILICON; TRIMETHYLALUMINIUM; UNCLASSIFIED DRUG; NANOMATERIAL;

ARTICLE; CHEMICAL VAPOR DEPOSITION; CONTROLLED STUDY; MORPHOLOGY; NANODEVICE; NANOTECHNOLOGY; PHASE TRANSITION; PRESSURE; PRIORITY JOURNAL; TEMPERATURE MEASUREMENT; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

ALUMINUM; CRYSTALLIZATION; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SILICON; SURFACE PROPERTIES;

EID: 67649148109     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/24/245602     Document Type: Article

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