Physics of below threshold current distribution in a-Si:H TFTs

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 257-262

  Slade, H C ^a   Shur, M S ^a   Deane, S C ^a   Hack, M ^a  

^a UNIVERSITY OF VIRGINIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT DISTRIBUTION; ELECTRIC INSULATORS; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICE MODELS; TEMPERATURE MEASUREMENT;

BIAS STRESS; CURRENT CONDUCTION CHANNEL; GATE BIAS; MATERIAL PROPERTIES; SUBTHRESHOLD CURRENT;

THIN FILM TRANSISTORS;

EID: 0030413942     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-257     Document Type: Conference Paper

References (14)