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Volumn 482, Issue 1-2, 2009, Pages 317-319
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Effect of assistant RF plasma on structure and properties of SiCN thin films prepared by RF magnetron sputtering of SiC target
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Author keywords
Assistant RF plasma; Diamond C C bond; Hardness; SiCN thin film
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Indexed keywords
ASSISTANT RF PLASMA;
BONDING STRUCTURE;
C-C BONDS;
HARDNESS VALUES;
NANOINDENTATION TECHNIQUES;
RF PLASMA;
RF-MAGNETRON SPUTTERING;
ROOM TEMPERATURE;
SI(1 0 0);
SICN THIN FILM;
SILICON CARBON NITRIDE;
STRUCTURE AND PROPERTIES;
WORKING PRESSURES;
CARBON FILMS;
DIAMOND FILMS;
DIAMONDS;
HARDNESS;
MAGNETRON SPUTTERING;
NITRIDES;
PLASMA DIAGNOSTICS;
PLASMA THEORY;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON CARBIDE;
THIN FILM DEVICES;
THIN FILMS;
WAVE PLASMA INTERACTIONS;
X RAY PHOTOELECTRON SPECTROSCOPY;
FILM PREPARATION;
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EID: 67349286474
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2009.04.008 Document Type: Article |
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Times cited : (8)
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References (11)
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