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Volumn 44, Issue 12, 2009, Pages 3043-3048
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Density of states effective mass of SnBi4Se7 deduced from the temperature dependence of electrical conductivity in the activation regime
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Author keywords
[No Author keywords available]
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Indexed keywords
BARRIER HEIGHTS;
CONTACT PROPERTIES;
CURRENT-VOLTAGE MEASUREMENTS;
DENSITY OF STATE;
EFFECTIVE MASS;
ELECTRICAL CONDUCTIVITY;
ELECTRON CONCENTRATION;
HIGH FIELD;
IDEALITY FACTORS;
IV CHARACTERISTICS;
POLYCRYSTALLINE SAMPLES;
QUASI BINARY SYSTEMS;
ROOM TEMPERATURE;
SPACE CHARGE LIMITED CONDUCTION;
TEMPERATURE DEPENDENCE;
TERNARY COMPOUNDS;
ACTIVATION ANALYSIS;
BISMUTH COMPOUNDS;
ELECTRIC CONDUCTIVITY;
TEMPERATURE DISTRIBUTION;
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EID: 67349239424
PISSN: 00222461
EISSN: 15734803
Source Type: Journal
DOI: 10.1007/s10853-009-3402-2 Document Type: Article |
Times cited : (3)
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References (36)
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