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Volumn 66, Issue 11, 2005, Pages 1887-1890

Density of states effective mass of n-type CuInSe2 from the temperature dependence of Hall coefficient in the activation regime

Author keywords

A. Electronic materials; A. Semiconductors; D. Magnetic properties; D. Transport properties

Indexed keywords

ACTIVATION ENERGY; HALL EFFECT; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; SINGLE CRYSTALS;

EID: 29144479363     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2005.09.023     Document Type: Conference Paper
Times cited : (9)

References (20)
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    • (1980) Philos. Mag. B , vol.42 , pp. 1003-1008
    • Robert, J.L.1    Raymond, A.2    Aulombard, R.L.3    Bousquet, C.4
  • 7
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    • High-magnetic field and high-hydrostatic-pressure investigation of hydrogenic- and resonant- impurity states in n-type indium arsenide
    • A. Kadri, R.L. Aulombard, K. Zitouni, M. Baj, and L. Konczewicz High-magnetic field and high-hydrostatic-pressure investigation of hydrogenic- and resonant- impurity states in n-type indium arsenide Phys. Rev. B 31 1985 8013 8023
    • (1985) Phys. Rev. B , vol.31 , pp. 8013-8023
    • Kadri, A.1    Aulombard, R.L.2    Zitouni, K.3    Baj, M.4    Konczewicz, L.5
  • 9
    • 0016535164 scopus 로고
    • Structure of the impurity band and magnetic-field- induced metal-non-metal transition in n-type InSb
    • D. Ferre, H. Dubois, and G. Biskupski Structure of the impurity band and magnetic-field- induced metal-non-metal transition in n-type InSb Phys. Status. Solidi. B 70 1975 81 90
    • (1975) Phys. Status. Solidi. B , vol.70 , pp. 81-90
    • Ferre, D.1    Dubois, H.2    Biskupski, G.3
  • 10
    • 4243919542 scopus 로고
    • Shallow donorlike impurity states in n-type InSb in magnetic field and under hydrostatic pressure
    • A. Kadri, K. Zitouni, L. Konczewicz, and R.L. Aulombard Shallow donorlike impurity states in n-type InSb in magnetic field and under hydrostatic pressure Phys. Rev. B 35 1987 6260 6268
    • (1987) Phys. Rev. B , vol.35 , pp. 6260-6268
    • Kadri, A.1    Zitouni, K.2    Konczewicz, L.3    Aulombard, R.L.4
  • 12
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    • Magnetic- field-induced Mott transition in semi-conductors
    • F.W. Fenton, and R.R. Hearing Magnetic- field-induced Mott transition in semi-conductors Phys. Rev. 159 1967 593 601
    • (1967) Phys. Rev. , vol.159 , pp. 593-601
    • Fenton, F.W.1    Hearing, R.R.2
  • 17
    • 0000941508 scopus 로고
    • Electronic properties of ZnO
    • A.R. Huston Electronic properties of ZnO J. Phys. Chem. Solids 8 1959 467 472
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    • Huston, A.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.