Electron beam induced deposited etch masks

Microelectronic Engineering

Volumn 86, Issue 4-6, 2009, Pages 961-964

  Heerkens, C Th H ^a   Kamerbeek, M J ^a   van Dorp, W F ^a   Hagen, C W ^a   Hoekstra, J ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

EBID; Etch mask; RIE

Indexed keywords

EBID; ELECTRON-BEAM-INDUCED DEPOSITIONS; ETCH MASK; HIGH THROUGHPUTS; LOW ASPECT RATIOS; NANOMETER RESOLUTIONS; REPRODUCIBILITY; RIE; SINGLE-ELECTRON DEVICES;

ASPECT RATIO; ELECTRON BEAMS;

ELECTRODES;

EID: 67349234447     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.11.079     Document Type: Article

References (6)

1. Dolan G.J. Appl. Phys. Lett. 31 (1977) 337-339
2. Gotoh Y., Matsumoto K., Bubanja V., Vazquez F., Maeda T., and Harris J.S. Jpn. J. Appl. Phys. 39 (2000) 2334-2337
3. Matsumoto K., Ishii M., Segawa K., Oka Y., Vartanian B.J., and Harris J.S. Appl. Phys. Lett. 68 (1996) 34-36
4. van Dorp W.F., van Someren B., Hagen C.W., Kruit P., and Crozier P.A. Nano Lett. 5 (2005) 1303-1307
5. Silvis-Cividjian N., Hagen C.W., Kruit P., Stam M.A.J.v.d., and Groen H.B. Appl. Phys. Lett. 82 (2003) 3514-3516
6. van Dorp W.F., Lazar S., Hagen C.W., and Kruit P. J. Vac. Sci. Technol. B 25 (2007) 1603-1608