SCOPUS 정보 검색 플랫폼

Volumn 181, Issue 1-2, 2001, Pages 1-14

The chemical composition changes of silicon and phosphorus in the process of native oxide formation of heavily phosphorus doped silicon

(5) Ying, W B a Mizokawa, Y a Kamiura, Y a Kawamoto, K b Yang, W Y c

a Osaka Prefecture University (Japan)

b DENSO CORPORATION (Japan)

c NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

Angle dependent X ray photoelectron spectroscopy (XPS); Chemical status of Si; Heavily P doped Si; Native oxide; Phosphorus segregation; Surface chemistry of Si

Indexed keywords

LEAKAGE CURRENTS; OXIDATION; PHOSPHORUS; POLYSILICON; SEMICONDUCTOR DOPING; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

NATIVE OXIDE FORMATION;

SEMICONDUCTING SILICON;

EID: 0035801799 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00202-1 Document Type: Article

Times cited : (43)

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