A uniform, reproducible and reliable GaN HEMT technology with breakdown voltages in excess of 160 V delivering more than 60% PAE at 80 V

2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

Volumn , Issue , 2008, Pages

  Waltereit, P ^a   Bronner, W ^a   Quay, R ^a   Dammann, M ^a   Muller S ^a   Kiefer, R ^a   Walcher, H ^a   Van Raay, F ^a   Kappeler, O ^a   Mikulla, M ^a   Van Rijs, F ^b   Rodle T ^b   Murad, S ^b   Klappe, J ^b   Van Der Wel, P ^b   Henriette, P ^b   Aleiner, B ^b   Blednov, I ^b   Thorpe, J ^c   Behtash, R ^c   Blanck, H ^c   Riepe, K ^c   more..

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b NXP SEMICONDUCTORS   (Netherlands)

^c United Monolithic Semiconductors GmbH   (Germany)

Author keywords

GaN; HEMT; Reliability; Technology

Indexed keywords

DIRECT CURRENT STRESS; GAN; HIGH REPRODUCIBILITY; LINEAR RELATIONSHIPS; LOAD-PULL MEASUREMENT; OUTPUT POWER DENSITY; POWER-ADDED EFFICIENCY; PROCESSING TECHNIQUE;

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; TECHNOLOGY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84887450862     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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4. J. Nikaido, T. Kikkawa, S. Yokokawa, and Y. Tateno in: Proceedings of the CS MANTECH 2005, New Orleans, USA (GaAs Mantech, St. Louis, 2005), p. 151