Solution-processed bootstrapped organic inverters based on P3HT with a high-κ gate dielectric material

IEEE Electron Device Letters

Volumn 30, Issue 5, 2009, Pages 484-486

  Raval, Harshil Narenda ^a   Tiwari, Shree Prakash ^a   Navan, Ramesh R ^a   Mhaisalkar, Subodh G ^b   Rao, V Ramgopal ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Bootstrapping; High dielectric; Inverter; Organic field effect transistor (OFET)

Indexed keywords

BOOTSTRAPPING; DC GAIN; EXPERIMENTAL CHARACTERIZATION; INVERTER; ORGANIC CIRCUITS; ORGANIC FIELD-EFFECT TRANSISTOR (OFET); ORGANIC FIELD-EFFECT TRANSISTORS; OUTPUT SWING; P-TYPE; POLY-3-HEXYLTHIOPHENE; SOLUTION-PROCESSED; SUPPLY VOLTAGES; SWITCHING BEHAVIORS;

DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR);

FIELD EFFECT TRANSISTORS;

EID: 67349198091     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2016679     Document Type: Article

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