Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric

Thin Solid Films

Volumn 516, Issue 5, 2008, Pages 770-772

  Tiwari, S P ^a   Srinivas, P ^a   Shriram, S ^a   Kale, Nitin S ^a   Mhaisalkar, S G ^b   Ramgopal Rao, V ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

HWCVD; Mobility; ON OFF ratio; Organic Field Effect Transistor (OFET); Passivation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; PASSIVATION; PERMITTIVITY; SEMICONDUCTING ORGANIC COMPOUNDS;

GATE DIELECTRIC MATERIALS; HOT WIRE CHEMICAL VAPOUR DEPOSITED (HWCVD); ORGANIC FIELD EFFECT TRANSISTOR (OFET); PASSIVATION LAYERS;

SILICON NITRIDE;

EID: 36749080937     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.048     Document Type: Article

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