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Volumn 24, Issue 3, 1998, Pages 226-228

Influence of short-term annealing on the conductivity of porous silicon and the transition resistivity of an aluminum-porous silicon contact

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EID: 0032361746     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1262063     Document Type: Article
Times cited : (19)

References (11)
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    • Zimin, S.P.1
  • 3
    • 11544367193 scopus 로고
    • S. P. Zimin, Pis'ma Zh. Tekh. Fiz. 21(24), 46 (1995) [Tech. Phys. Lett. 21, 1015 (1995)].
    • (1995) Tech. Phys. Lett. , vol.21 , pp. 1015
  • 5
    • 0004005306 scopus 로고
    • Wiley, New York Energiya, Moscow (1973)
    • S. M. Sze, Physics of Semiconductor Devices [Wiley, New York (1969); Energiya, Moscow (1973), Vol. 1, 456 pp.].
    • (1969) Physics of Semiconductor Devices , vol.1
    • Sze, S.M.1
  • 8
    • 0343232834 scopus 로고
    • B. N. Mukashev, M. F. Tamendarov, and S. Zh. Tokmoldin, Fiz. Tekh. Poluprovodn. 26(6), 1124 (1992) [Sov. Phys. Semicond. 26, 628 (1992)].
    • (1992) Sov. Phys. Semicond. , vol.26 , pp. 628
  • 10
    • 11544328345 scopus 로고    scopus 로고
    • I. A. Kurova, N. V. Meleshko, E. V. Larina et al., Fiz. Tekh. Poluprovodn. 30, 12 (1996) [Semiconductors 30, 6 (1996)].
    • (1996) Semiconductors , vol.30 , pp. 6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.