Choice of generation volume models for electron beam induced current computation

IEEE Transactions on Electron Devices

Volumn 56, Issue 5, 2009, Pages 1094-1099

  Kurniawan, Oka ^a,b   Ong, Vincent K S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

Author keywords

Charge carrier processes; Charge injection; Electron beam applications; Semiconductor materials measurements; Simulation

Indexed keywords

CHARGE CARRIER PROCESSES; ELECTRON HOLE PAIRS; ELECTRON-BEAM APPLICATIONS; ELECTRON-BEAM-INDUCED CURRENT; MONTE CARLO SIMULATION; SECOND DERIVATIVES; SIMULATION; SPATIAL DISTRIBUTION; VOLUME DISTRIBUTIONS; VOLUME MODELS;

CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRON BEAMS; ELECTRONS; MONTE CARLO METHODS; SIMULATORS; SIZE DISTRIBUTION;

SEMICONDUCTOR JUNCTIONS;

EID: 67349179694     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2015159     Document Type: Article

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