Implementation of low-voltage static RAM with enhanced data stability and circuit speed

Microelectronics Journal

Volumn 40, Issue 6, 2009, Pages 944-951

  Chung, Yeonbae ^a   Song, Seung Ho ^a  

^a Kyungpook National University   (South Korea)

Author keywords

Cell current; Six transistor cell; SRAM; Static noise margin; Write margin

Indexed keywords

CELL CURRENT; SIX-TRANSISTOR CELL; SRAM; STATIC NOISE MARGIN; WRITE MARGIN;

CYTOLOGY; SPEED; STATIC RANDOM ACCESS STORAGE;

CELLS;

EID: 67349170387     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.11.063     Document Type: Article

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