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Volumn 34, Issue 8, 1999, Pages 1091-1098

Optimization of word-line booster circuits for low-voltage flash memories

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DATA STORAGE EQUIPMENT; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC POWER SUPPLIES TO APPARATUS; OPTIMIZATION;

EID: 0033169552     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.777107     Document Type: Article
Times cited : (84)

References (14)
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    • Otsuka, N.1    Horowitz, M.2
  • 6
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    • On-chip high-voltage generation in MNOS integrated circuits using an improved voltage multiplier technique
    • June
    • J. F. Dickson, "On-chip high-voltage generation in MNOS integrated circuits using an improved voltage multiplier technique," IEEE J. Solid-State Circuits, vol. SC-11, pp. 374-378. June 1976.
    • (1976) IEEE J. Solid-state Circuits , vol.SC-11 , pp. 374-378
    • Dickson, J.F.1
  • 10
    • 0029508915 scopus 로고
    • An on-chip high-voltage generator circuit for EEPROM's with a power supply voltage below 2V
    • June
    • K. Sawada, Y. Sugawara, and S. Masui, "An on-chip high-voltage generator circuit for EEPROM's with a power supply voltage below 2V," in 1995 Symp. VLSI Circuits Dig. Tech. Papers, June 1995, pp. 75-76.
    • (1995) 1995 Symp. VLSI Circuits Dig. Tech. Papers , pp. 75-76
    • Sawada, K.1    Sugawara, Y.2    Masui, S.3
  • 11
    • 0001050518 scopus 로고    scopus 로고
    • MOS charge pumps for low-voltage operation
    • Apr.
    • J. Wu and K. Chang, "MOS charge pumps for low-voltage operation," IEEE J. Solid-State Circuits, vol. 33, pp. 592-597, Apr. 1998.
    • (1998) IEEE J. Solid-state Circuits , vol.33 , pp. 592-597
    • Wu, J.1    Chang, K.2
  • 12
    • 0021640260 scopus 로고
    • Conduction in thermal oxides grown on polysilicon and its influence on floating gate EEPROM degradation
    • G. Groeseneken and H. E. Maes, "Conduction in thermal oxides grown on polysilicon and its influence on floating gate EEPROM degradation," in Tech. Dig. IEDM, 1984, pp. 476-479.
    • (1984) Tech. Dig. IEDM , pp. 476-479
    • Groeseneken, G.1    Maes, H.E.2
  • 13
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    • Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness
    • K. Naruke, S. Taguchi, and M. Wada, "Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness," in Tech. Dig. IEDM, 1988, pp. 424-427.
    • (1988) Tech. Dig. IEDM , pp. 424-427
    • Naruke, K.1    Taguchi, S.2    Wada, M.3
  • 14
    • 0031210141 scopus 로고    scopus 로고
    • A dynamic analysis of the dickson charge pump circuit
    • Aug.
    • T. Tanzawa and T. Tanaka, "A dynamic analysis of the Dickson charge pump circuit," IEEE J. Solid-State Circuits, vol. 32, pp. 1231-1240, Aug. 1997.
    • (1997) IEEE J. Solid-State Circuits , vol.32 , pp. 1231-1240
    • Tanzawa, T.1    Tanaka, T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.