Characterization of a novel nine-transistor SRAM cell

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Volumn 16, Issue 4, 2008, Pages 488-492

  Liu, Zhiyu ^a   Kursun, Volkan ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

Cache memory; Data stability; Leakage power; Process variations; Static noise margin; Super cutoff sleep mode

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POWER UTILIZATION; MICROPROCESSOR CHIPS; TRANSISTORS;

LEAKAGE POWER; PROCESS VARIATIONS; SUPER CUTOFF SLEEP MODE;

STATIC RANDOM ACCESS STORAGE;

EID: 41549118603     PISSN: 10638210     EISSN: None     Source Type: Journal    
DOI: 10.1109/TVLSI.2007.915499     Document Type: Article

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