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Volumn 907, Issue 1-3, 2009, Pages 74-84

Theoretical study of small Al-Ga-N ternary clusters

Author keywords

AlGaN clusters; Electronic properties; Geometric structures; Stabilities

Indexed keywords


EID: 67349161021     PISSN: 01661280     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.theochem.2009.04.027     Document Type: Article
Times cited : (4)

References (47)
  • 4
    • 0002735247 scopus 로고    scopus 로고
    • GaN and AlGaN Devices: FETs and Photodetectors
    • S.J. Pearton Ed, Gordon and Breach, Netherlands
    • M.S. Shur, M.A. Khan, GaN and AlGaN Devices: FETs and Photodetectors, in: S.J. Pearton (Ed.), GaN and Related Materials II, Gordon and Breach, Netherlands, 1999, pp. 47-92.
    • (1999) GaN and Related Materials II , pp. 47-92
    • Shur, M.S.1    Khan, M.A.2
  • 37
    • 0034319689 scopus 로고    scopus 로고
    • 3 is available as part of Materials Studio
    • 3 is available as part of Materials Studio
    • (2000) J. Chem. Phys. , vol.113 , pp. 7756
    • Delley, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.