Geometric and electronic structures of small GaN clusters

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 328, Issue 4-5, 2004, Pages 364-374

  Song, Bin ^a   Cao, Pei Lin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

31.15. p; 36.40. c; 61.46.+w; 73.22. f; Energy gap; GaN clusters; Lowest energy structure

Indexed keywords

ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM NITRIDE; GEOMETRY; III-V SEMICONDUCTORS; MOLECULAR DYNAMICS; SIMULATED ANNEALING;

73.22.-F; FULL POTENTIAL LINEAR MUFFIN-TIN ORBITAL METHODS; GAN CLUSTERS; HOMO-LUMO GAPS; LOWEST ENERGY STRUCTURE; SIMULATED ANNEALING TECHNIQUES;

BINDING ENERGY;

GALLIUM; NITROGEN DERIVATIVE;

ARTICLE; BINDING KINETICS; CALCULATION; CHEMICAL BINDING; CHEMICAL STRUCTURE; ENERGY; GEOMETRY; MOLECULAR DYNAMICS; SIMULATION;

EID: 3242662709     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2004.06.032     Document Type: Article

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