Mott and Efros-Shklovskii hopping conductions in porous silicon nanostructures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 6, 2009, Pages 1025-1028

  Islam, Md Nazrul ^a   Ram, Sanjay K ^b,c   Kumar, Satyendra ^c  

^a Indian Space Research Organization Space Application Centre   (India)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^c INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

Electrical and electronic properties; Hopping transport; Porous silicon

Indexed keywords

BERTHELOT; CONDUCTIVITY DATUM; ELECTRICAL AND ELECTRONIC PROPERTIES; ELECTRICAL CONDUCTIVITIES; ELECTRICAL TRANSPORT MECHANISMS; HOPPING CONDUCTIONS; HOPPING TRANSPORT; LOW TEMPERATURES; POROUS SILICON NANOSTRUCTURES; ROOM TEMPERATURES; STATE CONDUCTIONS; TEMPERATURE RANGES; VARIABLE RANGE HOPPING;

ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES;

POROUS SILICON;

EID: 67349148333     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.08.047     Document Type: Article

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