Atomic hydrogen etching of silicon-incorporated diamond-like carbon films prepared by pulsed laser deposition

Diamond and Related Materials

Volumn 18, Issue 5-8, 2009, Pages 831-834

  Nakazawa, H ^a   Sugita, H ^a   Enta, Y ^a   Suemitsu, M ^b   Yasui, K ^c   Itoh, T ^b   Endoh, T ^b   Narita, Y ^d   Mashita, M ^a  

^a HIROSAKI UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

^d KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Diamond like carbon; Etching; Hydrogen; Pulsed laser deposition

Indexed keywords

ATOMIC HYDROGEN; ATOMIC HYDROGEN ETCHING; CHEMICAL BONDINGS; DETECTION ANGLE; DIAMOND-LIKE CARBON; DLC FILM; ETCHING RATE; HF SOLUTIONS; HIGH-VACUUM CHAMBERS; HYDROGEN ETCHING; KRF EXCIMER LASER; MAIN COMPONENT; OXIDE COMPONENTS; OXIDE LAYER; PHOTOELECTRON SPECTRUM; SUBSTRATE TEMPERATURE; SURFACE NORMALS; THIN OXIDE LAYERS;

ATOMS; CHEMICAL BONDS; DIAMOND FILMS; DIAMOND LIKE CARBON FILMS; DIAMONDS; ELECTRON SPECTROSCOPY; ETCHING; EXCIMER LASERS; GAS LASERS; HYDROFLUORIC ACID; HYDROGEN; KRYPTON; OXIDE FILMS; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; PULSED LASER DEPOSITION; SILICON; SILICON OXIDES; SPECTRUM ANALYSIS; SYNCHROTRON RADIATION; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON FILMS;

EID: 67349144992     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.10.043     Document Type: Article

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