In situ etching of SiC wafers in a CVD system using oxygen as the source

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 303-306

  Wang, Rongjun ^a   Bhat, Ishwara ^a   Chow, T Paul ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

In situ etching; Oxygen etching

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; HYDROGEN; OPTICAL MICROSCOPY; SILICON CARBIDE; SILICON WAFERS; DROPS; OXYGEN; SUBSTRATES;

HYDROGEN ETCHING; IN SITU ETCHING; OXYGEN-ETCHING; CONVENTIONAL METHODS; ETCHED SURFACE; IN-SITU ETCHING; IN-SITU METHODS; OXYGEN ETCHING; SIC SUBSTRATES; SILICON DROPLETS;

ETCHING;

EID: 8744232337     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.303     Document Type: Article

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