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Microelectronic Engineering

Volumn 86, Issue 4-6, 2009, Pages 561-564

The AFM LAO lithography on GaMnAs layers

(3) Voves, Jan a Cukr, M b Novak V b

a CZECH TECHNICAL UNIVERSITY IN PRAGUE (Czech Republic)

b INSTITUTE OF PHYSICS (Czech Republic)

Author keywords

Atomic force microscopy; Ferromagnetic semiconductor; Local anodic oxidation; Magnetoresistance

Indexed keywords

AFM; ATOMIC FORCE MICROSCOPES; FERROMAGNETIC SEMICONDUCTOR; IN-PLANE MAGNETIC FIELDS; LOCAL ANODIC OXIDATION; LOW TEMPERATURES; MAGNETO-RESISTANCE EFFECTS; MUTUAL ORIENTATIONS; NANOCONSTRICTIONS; OXIDE LINES; PATTERNING TECHNIQUES;

ATOMIC FORCE MICROSCOPY; ATOMS; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MOS CAPACITORS; SEMICONDUCTOR MATERIALS;

ANODIC OXIDATION;

EID: 67349144651 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2008.11.035 Document Type: Article

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.