Magnetization reversal with domain-wall pinning in (Ga, Mn)As wire

IEEE Transactions on Magnetics

Volumn 41, Issue 10, 2005, Pages 2742-2744

  Koike, T ^a   Hamaya, K ^a   Funakoshi, N ^b   Takemura, Y ^b   Kitamoto, Y ^a   Munekata, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

Magnetic anisotropy; Magnetic semiconductor; Magnetoresistance; Micromagnetic simulations

Indexed keywords

ARSENIC; COMPUTER SIMULATION; MAGNETIC ANISOTROPY; MAGNETIC DOMAINS; MAGNETIC SEMICONDUCTORS; MAGNETORESISTANCE;

MICROMAGNETIC SIMULATION;

MAGNETIZATION;

EID: 27744515331     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2005.854730     Document Type: Article

References (12)

1. A. Oiwa, Y. Mitsumori, R. Moriya, T. Slupinski, and H. Munekata, "Effect of optical spin injection on ferromagnetically coupled Mn spins in the III-V magnetic alloy semiconductor (Ga,Mn)As," Phys. Rev. Lett., vol. 88, p. 137 202, 2002.
2. M. Yamanouchi, D. Chiba, F. Matsukura, and H. Ohno, "Current-induced domain-wall switching in a ferromagnetic semiconductor structure," Nature, vol. 428, p. 539, 2004.
3. A. Yamaguchi, T. Ono, S. Nasu, K. Miyake, K. Mibu, and T. Shinjo, "Real-space observation of current-driven domain wall motion in sub-micron mgnetic wires," Phys. Rev. Lett., vol. 92, p. 077 205, 2004.
4. xAs," Phys. Rev. Lett., vol. 90, p. 167 206, 2003.
5. K. Hamaya, T. Taniyama, Y. Kitamoto, R. Moriya, and H. Munekata, "Magnetotransport study of temperature dependent magnetic anisotropy in a (Ga,Mn)As epilayer," J. Appl. Phys., vol. 94, p. 7657, 2003.
6. K. Hamaya, R. Moriya, A. Oiwa, T. Taniyama, Y. Kitamoto, and H. Munekata, "Contribution of shape anisotropy to magnetic configurationin of (Ga,Mn)As," Jpn. J. Appl. Phys., vol. 43, p. L306, 2004.
7. C. Rüster, T. Borzenko, C. Gould, G. Schmidt, L. W. Molenkamp, X. Liu, T. J. Wojtowicz, J. K. Furdyna, Z. G. Yu, and M. E. Flatté, "Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions," Phys. Rev. Lett., vol. 91, p. 216 602, 2003.
8. H. Kato, K. Hamaya, T. Taniyama, Y. Kitamoto, and H. Munekata, "Significant change in-plane magnetic anisotropy of (Ga,Mn)As epilayer induced by low-temperature annealing," Jpn. J. Appl. Phys., vol. 43, p. L904, 2004.
9. [Online]. Available: http://math.nist.gov/oommf/
10. L. Thomas, S. S. P. Parkin, J. Yu, U. Rüdiger, and A. D. Kent, "Micromagnetics of submicron (110) Fe elements," Appl. Phys. Lett., vol. 76, p. 766, 2000.
11. T. Ono, H. Miyajima, K. Shigeto, and T. Shinjo, "Magnetization reversal in submicron magnetic wire studied by using giant magnetresistance effect," Appl. Phys. Lett., vol. 72, p. 1116, 1998.
12. 19 elements: An approach to magnetic memory devices," Appl. Phys. Lett., vol. 81, p. 862, 2002.