Performance of Ge/Si receivers at 1310 nm

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 6, 2009, Pages 1076-1081

  Morse, M ^a   Dosunmu, O ^a   Yin, T ^a   Kang, Y ^a   Liu, H D ^a   Sarid, G ^b   Ginsburg, E ^b   Cohen, R ^b   Litski, S ^b   Zadka, M ^b  

^a INTEL CORPORATION   (United States)

^b Numonyx Corporation   (Israel)

Author keywords

Germanium; Photodetector; Silicon photonics

Indexed keywords

10 GB/ S; 1550 NM; AVALANCHE PHOTODETECTORS; BAND GAPS; GAAS; GAAS DETECTORS; GAIN-BANDWIDTH PRODUCTS; GE DETECTORS; INP; INTERNAL QUANTUM EFFICIENCIES; RESPONSIVITY; SILICON PHOTONICS; WAVELENGTH RANGES;

DETECTORS; GALLIUM ALLOYS; GERMANIUM; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTONIC DEVICES; SEMICONDUCTING GALLIUM;

BANDWIDTH;

EID: 67349141482     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.08.017     Document Type: Article

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