Performance of Ge-on-Si p-i-n photodetectors for standard receiver modules

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 75-84

  Morse, Mike ^a   Dosunmu, Olufemi ^a   Sarid, Gadi ^b   Chetrit, Yoel ^b  

^a INTEL CORPORATION   (United States)

^b INTEL CORPORATION   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CURRENT DENSITY; FABRICATION; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR DEVICE TESTING; THERMAL EFFECTS;

DARK CURRENT DENSITY; GAAS DEVICES; ROOM TEMPERATURE;

PHOTODETECTORS;

EID: 33846970234     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355796     Document Type: Conference Paper

References (9)

1. nd IEEE International Conference on Group IV Photonics, Antwerp, Belgium, p. 216 (2005).
2. A. G. Cullis and L. T. Canham, Nature, 353 (6342), p. 335 (1991).
3. L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U. Keil, T. Franck, Opt. Exp., 13 (8), p. 3129 (2005).
4. S. Luryi, A. Kastalsky, J.C. Bean, IEEE Trans. on Elect. Dev., 31 (9), p. 1135 (1984).
5. J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. Cannon, S. Jongthammanurak, D. Danielson, L.C. Kimerling, J. Chen, F. O. Ilday, F. X. Karrner, J. Yasaitis, Appl. Phys. Lett., 87 (10), p. 103501 (2005).
6. M. Jutzi, M. Berroth, G. Wohl, M. Oehme, E. Kasper, IEEE Photon. Technol. Lett., 17(7), p.1510 (2005).
7. J.L. Polleux and C. Rumelhard, IEEE Symposium on EDMO, p. 167 (2000).
8. P. Laitinen, G. Tiourine, V. Touboltsev, J. Räisänen, Nuclear Instruments and Methods in Physics Research B, 190, p. 183 (2002).
9. G.L. McVay and A.R. DuCharme, J. Appl. Phys, 44 (3), p. 1409 (1973).