Electron field emission properties of a gated conductive nanowire

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 7, 2009, Pages 1169-1173

  Lei, Da ^a,b   Wang, Weibiao ^a   Zeng, Leyong ^a,b   Liang, Jingqiu ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Enhancement factor; Field emission; Gated nanowire

Indexed keywords

ANODE VOLTAGES; DEVICE PARAMETERS; ELECTRON FIELD EMISSION PROPERTIES; ELECTROSTATIC THEORIES; ENHANCEMENT FACTOR; FIELD ENHANCEMENT; FIELD ENHANCEMENT FACTOR; GATED NANOWIRE; GATED STRUCTURES; HOLE RADIUS;

ELECTRIC FIELDS; FIELD EMISSION; NANOWIRES;

ELECTRIC WIRE;

EID: 67349126032     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.01.017     Document Type: Article

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