General analytical relationship for electric field of gated field emitters

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 6 A, 2005, Pages 3854-3859

  Nicolaescu, Dan ^a   Nagao, Masayoshi ^a   Filip, Valeriu ^b   Kanemaru, Seigo ^a   Itoh, Junji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF BUCHAREST   (Romania)

Author keywords

Electric field; Field emission; Gated emitter

Indexed keywords

CALCULATIONS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; LOGIC GATES; PARAMETER ESTIMATION; SILICON;

FIELD EMISSION; GATED EMITTER; TUNNELING PROCESS;

ELECTRIC FIELDS;

EID: 23944465877     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.3854     Document Type: Article

References (24)

1. D. Temple: Mater. Sci. Eng. R 24 (1999) 185.
2. Vacuum Microelectronics, ed. W. Zhu (John Wiley & Sons, New York, 2001).
3. R. H. Fowler and L. W. Nordheim: Proc. R. Soc. London, Ser. A 119 (1928) 173.
4. E. L. Murphy and R. H. Good: Phys. Rev. 102 (1956) 1464.
5. R. H. Good and E. W. Müller: in Field emission, ed. S. Flugge (Springer-Verlag, Berlin, 1956) p. 176.
6. D. Nicolaescu: J. Vac. Sci. Technol. B 11 (1993) 392.
7. D. Nicolaescu, M. Nagao, V. Filip, S. Kanemaru and J. Itoh: J. Vac. Sci. Technol. B 21 (2003) 1550.
8. D. Nicolaescu, T. Sato, M. Nagao, V. Filip, S. Kanemaru and J. Itoh: J. Vac. Sci. Technol. B 22 (2004) 1227.
9. D. Nicolaescu, M. Nagao, T. Sato, V. Filip, S. Kanemaru and J. Itoh: J. Vac. Sci. Technol. B 23 (2005) 707.
10. C. A. Spindt, I. Brodie, L. Humphrey and E. R. Westerberg: J. Appl. Phys. 47 (1976) 5248.
11. J. D. Zuber, K. L. Jensen and T. E. Sullivan: J. Appl. Phys. 91 (2002) 9379.
12. K. L. Jensen, P. Mukhopadhyay-Phillips, E. G. Zaidman, K. Nguyen, M. A. Kodis, L. Malsawma and C. Hor: Appl. Surf. Sci. 111 (1997) 204.
13. M. Ding, G. N. Sha and A. I. Akinwande: IEEE Trans. Electron Devices 49 (2002) 2333.
14. C. Y. Hong and A. I. Akinwande: J. Vac. Sci. Technol. B 21 (2003) 500.
15. D. A. Dahl: Simion 3D Version 7.0 User's Manual INEEL-95/0403, Idaho National Engineering and Environmental Laboratory, Idaho Falls, ID 83415 (2000).
16. Origin 7.0 technical graphics and data analysis software, OriginLab Corporation, Northampton, MA.
17. M. Nagao, Y. Sacho, S. Kanemaru, T. Matsukawa and J. Itoh: Tech. Dig. 17th Int. Vacuum Nanoelectronics Conf., eds. A. I. Akinwande, L. Y. Chen, I. Kimissis and C. Y. Hong, Boston, MA, USA, 2004, p. 134.
18. M. Nagao, Y. Sacho, S. Kanemaru, T. Matsukawa and J. Itoh: IDW '04, Niigata, Japan, 2004, Paper FED 4-1.
19. M. Nagao, Y. Sacho, S. Kanemaru, T. Matsukawa and J. Itoh: Int. Microprocesses and Nanotechnol. Conf., Osaka, Japan, 2004, Paper 29A-l 1-1.
20. M. Nagao, Y. Sacho, T. Sato, T. Matsukawa, S. Kanemaru and J. Itoh: Jpn. J. Appl. Phys. 43 (2004) 3919.
21. T. Sato, S. Yamamoto, M. Nagao, T. Matsukawa, S. Kanemaru and J. Itoh: J. Vac. Sci. Technol. B 21 (2003) 1589.
22. T. Sato, M. Nagao, T. Matsukawa, S. Kanemaru, J. Itoh and S. Yamamoto: Tech. Dig. 16th Int. Vacuum Microelectronics Conf., eds. M. Takai, Y. Gotoh and J. Ishikawa, Osaka, Japan, 2003, p. 183.
23. K. L. Jensen: in Vacuum Microelectronics, ed. W. Zhu (Wiley, New York, 2001).
24. K. L. Jensen and C. M. Marrese-Reading: J. Vac. Sci. Technol. B 21 (2003) 412.