Dislocation reduction in sulfur-and germanium-doped indium phosphide single crystals grown by the vertical gradient freeze process: A transient finite-element study

Journal of Applied Physics

Volumn 97, Issue 4, 2005, Pages

  Zhu, X A ^a   Tsai, C T ^a  

^a Florida Atlantic University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITY; DISLOCATION REDUCTION; SEMICONDUCTOR CRYSTALS; VERTICAL GRADIENT FIELD (VGF);

CARRIER CONCENTRATION; CRYSTAL GROWTH; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); FINITE ELEMENT METHOD; OPTOELECTRONIC DEVICES; PARTIAL DIFFERENTIAL EQUATIONS; PLASTIC DEFORMATION; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL STRESS;

SINGLE CRYSTALS;

EID: 13744250928     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1848190     Document Type: Article

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