Vacancies and E-centers in silicon as multi-symmetry defects

Materials Science and Engineering: B

Volumn 159-160, Issue C, 2009, Pages 107-111

  Ganchenkova, M G ^a   Oikkonen, L E ^a   Borodin, V A ^b   Nicolaysen, S ^c   Nieminen, R M ^a  

^a AALTO UNIVERSITY   (Finland)

^b KURCHATOV INSTITUTE   (Russian Federation)

^c Institute for Microsystem Technology   (Norway)

Author keywords

Calculations; E center; Silicon; Vacancy

Indexed keywords

CALCULATIONS; VACANCIES;

CO-EXISTENCE; E-CENTER; E.CENTRE; ELEVATED TEMPERATURE; FIRST PRINCIPLE CALCULATIONS; FORMATION ENERGIES; METASTABLES; MULTI SYMMETRIES; STABLE CONFIGURATION; VACANCY-TYPE DEFECTS;

SILICON;

EID: 67349100631     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.10.040     Document Type: Article

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