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Volumn 258-263, Issue PART 1, 1997, Pages 653-658

The Jahn-Teller effect and the structure of monovacancies in Si, SiC and C

Author keywords

C; First principles calculations; Jahn Teller effect; Si; SiC; Vacancies

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; CRYSTAL SYMMETRY; SEMICONDUCTING DIAMONDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

EID: 0031339535     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.653     Document Type: Article
Times cited : (4)

References (18)
  • 1
    • 3743065573 scopus 로고
    • Defects and Radiation Effects in Semiconductors 1987, The Institute of Physics, Bristol
    • Watkins, G.D., Troxell, J.R. and Chaterjee, A.P., in Defects and Radiation Effects in Semiconductors 1987, IOP Conf. Ser. No. 146, The Institute of Physics, Bristol, p. 16 (1987).
    • (1987) IOP Conf. Ser. No. 146 , pp. 16
    • Watkins, G.D.1    Troxell, J.R.2    Chaterjee, A.P.3
  • 3
    • 0001371270 scopus 로고
    • Watkins, G.D. and Troxell, J.R., Phys. Rev. Lett. 44, 593 (1980); Troxell, J.R. and Watkins, D., Phys. Rev. B 22, 921 (1980).
    • (1980) Phys. Rev. B , vol.22 , pp. 921
    • Troxell, J.R.1    Watkins, D.2
  • 4
    • 0000053439 scopus 로고
    • ed. S. T. Pantelidis, Gordon and Breach, Philadelphia
    • Watkins, G.D., in Deep Centers in Semiconductors, ed. S. T. Pantelidis, Gordon and Breach, Philadelphia, p. 177 (1992).
    • (1992) Deep Centers in Semiconductors , pp. 177
    • Watkins, G.D.1
  • 10
    • 2442537377 scopus 로고    scopus 로고
    • Kresse, G. and Furthmüller, J., Comput. Mat. Sci. 6, 15 (1996); Phys. Rev. B 54, 11169 (1996).
    • (1996) Phys. Rev. B , vol.54 , pp. 11169


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.