Horizontally aligned growth of single-walled carbon nanotubes on a surface-modified silicon wafer

Journal of Physical Chemistry C

Volumn 113, Issue 19, 2009, Pages 8030-8034

  Yoshihara, Naoki ^a   Ago, Hiroki ^a,b   Imamoto, Kenta ^a   Tsuji, Masaharu ^a   Ikuta, Tatsuya ^a   Takahashi, Koji ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNED GROWTH; BACK-GATE; OXIDE LAYER; PLASMA TREATMENT; SI DEVICES; SI SUBSTRATES; SI WAFER; SI-BASED; STEP STRUCTURE; SURFACE-MODIFIED; SWNT GROWTH;

FIELD EFFECT TRANSISTORS; PLASMA APPLICATIONS; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON OXIDES; SILICON WAFERS; SINGLE-WALLED CARBON NANOTUBES (SWCN);

CARBON NANOTUBES;

EID: 67049137145     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp810036t     Document Type: Article

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