Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

Applied Physics Letters

Volumn 94, Issue 19, 2009, Pages

  Reckinger, Nicolas ^a   Tang, Xiaohui ^a   Bayot, Vincent ^a   Yarekha, Dmitri A ^b   Dubois, Emmanuel ^b   Godey, Sylvie ^b   Wallart, Xavier ^b   Larrieu, Guilhem ^b   Łaszcz, Adam ^c   Ratajczak, Jacek ^c   Jacques, Pascal J ^a   Raskin, Jean Pierre ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b INSTITUT D ELECTRONIQUE   (France)

^c ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ER SILICIDE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIER LOWERING; THERMAL-ANNEALING;

CRYSTALLINE MATERIALS; ERBIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICIDES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67049100760     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3136849     Document Type: Article

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