Nonplanar high-k dielectric thickness measurements using CD-SAXS

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7272, Issue , 2009, Pages

  Wang, Chengqing ^a   Choi, Kwang Woo ^b   Chen, Yi Ching ^a   Price, Jimmy ^c   Ho, Derek L ^a   Jones, Ronald L ^a   Soles, Christopher ^a   Lin, Eric K ^a   Wu, Wen Li ^a   Bunday, Benjamin D ^c  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b INTEL CORPORATION   (United States)

^c SEMATECH   (United States)

Author keywords

CD SAXS; Critical dimension; FinFET; High k dielectric; Small angle X ray scattering; Tri gate

Indexed keywords

CD-SAXS; CRITICAL DIMENSION; FINFET; HIGH-K DIELECTRIC; SMALL ANGLE X-RAY SCATTERING; TRI-GATE;

DATA STORAGE EQUIPMENT; FIELD EFFECT TRANSISTORS; SCANNING ELECTRON MICROSCOPY; SCATTERING; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY SCATTERING;

PROCESS CONTROL;

EID: 66649129053     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.813757     Document Type: Conference Paper

References (11)

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9. Certain equipment, instruments or materials are identified in this paper to adequately specify the experimental details. Such identification does not imply recommendation by the National Institute of Standards and Technology nor does it imply the materials are necessarily the best available for the purpose.
10. The data in this letter, in the figures, and in the tables are presented along with the standard uncertainty (±) involved in the measurement, where the uncertainty represents one standard deviation from the mean.
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