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Volumn 7272, Issue , 2009, Pages

Use of 3D metrology for process control

Author keywords

APC; Ar; Calibration; FIB; Linewidth; SEM; TEM

Indexed keywords

APC; AR; FIB; SEM; TEM;

EID: 66649125212     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.816370     Document Type: Conference Paper
Times cited : (2)

References (11)
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    • Usage of profile information obtained with scatterometry, Koike, Asano, Mikami, Yamazaki
    • SPIE
    • Koike, T., Asano, M., Mikami, T., Yamazaki, Y., Usage of profile information obtained with scatterometry, Koike, Asano, Mikami, Yamazaki, Proc. Of SPIE Vol. 5752, SPIE (2005)
    • (2005) Proc. of SPIE , vol.5752
    • Koike, T.1    Asano, M.2    Mikami, T.3    Yamazaki, Y.4
  • 4
    • 66649136023 scopus 로고    scopus 로고
    • Status and Future Lithography for sub-hp32nm device
    • Puerto Rico, December
    • Higashiki, T., Status and Future Lithography for sub-hp32nm device, Lithography Workshop, Puerto Rico, December (2007)
    • (2007) Lithography Workshop
    • Higashiki, T.1
  • 6
    • 37149038885 scopus 로고    scopus 로고
    • Photoresist cross-sectioning with negligible damage using a dual-beam FIB-SEM: A high throughput method for profile imaging
    • November
    • Clarke, J., Schmidt, M., Orji, G., Photoresist cross-sectioning with negligible damage using a dual-beam FIB-SEM: A high throughput method for profile imaging, J. Vac. Sci. Technol. B Volume25, Issue 6, pp. 2526-2530, November (2007)
    • (2007) J. Vac. Sci. Technol. B , vol.25 , Issue.6 , pp. 2526-2530
    • Clarke, J.1    Schmidt, M.2    Orji, G.3
  • 7
    • 45449112590 scopus 로고    scopus 로고
    • Double patterning for 32nm and below: An update
    • Finders, J., Double patterning for 32nm and below: an update, Proc. of SPIE (2008)
    • (2008) Proc. of SPIE
    • Finders, J.1
  • 9
    • 0030274008 scopus 로고    scopus 로고
    • A comparison of focused ion beam and electron beam induced deposition processes
    • Lipp, Frey, Lehrer, Demm, Pauthner, Ryssel, A comparison of focused ion beam and electron beam induced deposition processes, Microelectron. Reliab., Vol.36, No. 11/12, pp. 1779-1782 (1996)
    • (1996) Microelectron. Reliab. , vol.36 , Issue.11-12 , pp. 1779-1782
    • Lipp, F.1    Lehrer, D.2    Pauthner, R.3
  • 10
    • 66649119627 scopus 로고    scopus 로고
    • Personal communication with Dr. Heiko Stegmann, Carl Zeiss SMT
    • Personal communication with Dr. Heiko Stegmann, Carl Zeiss SMT
  • 11
    • 66649120379 scopus 로고    scopus 로고
    • Measured data from Tatsuya Asahata, SII Nanotechnology
    • Measured data from Tatsuya Asahata, SII Nanotechnology


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.