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Volumn 7272, Issue , 2009, Pages

Study of devices leakage of 45nm node with different SRAM layouts using an advanced e-beam inspection systems

Author keywords

[No Author keywords available]

Indexed keywords

45NM NODE; CONTACT HOLES; E-BEAM INSPECTION; NICKEL SUICIDE; OVER-ETCHING; POSITIVE MODE; STATIC RANDOM ACCESS MEMORY; VOLTAGE CONTRAST;

EID: 66649123135     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.813885     Document Type: Conference Paper
Times cited : (21)

References (5)
  • 3
    • 21644467234 scopus 로고    scopus 로고
    • Drastic suppression of thermally induced leakage of NiSi silicided shallow junctions by pre-SALICIDE Fluorine implantation
    • M. Tsuchiaki, K. Ohuchi, and A. Nishiyama, "Drastic suppression of thermally induced leakage of NiSi silicided shallow junctions by pre-SALICIDE Fluorine implantation," IEDM Tech. Dig., pp. 1059, (2004)
    • (2004) IEDM Tech. Dig. , pp. 1059
    • Tsuchiaki, M.1    Ohuchi, K.2    Nishiyama, A.3
  • 4
    • 35148852072 scopus 로고    scopus 로고
    • Contact leakage and open monitoring with an advanced e-beam inspection system
    • Shuen-chen Lei, Hermes Liu, Mingsheng Tsai, Hung-Chi Wu, Hong Xiao and Jack Jau, "Contact leakage and open monitoring with an advanced e-beam inspection system", Proc. of SPIE, Vol. 6518, pp. 651841, (2007)
    • (2007) Proc. of SPIE , vol.6518 , pp. 651841
    • Lei, S.-C.1    Liu, H.2    Tsai, M.3    Wu, H.-C.4    Xiao, H.5    Jau, J.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.