Drastic suppression of thermally induced leakage of NiSi silicided shallow junctions by pre-SALICIDE fluorine implantation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 1059-1062

  Tsuchiaki, M ^a   Ohuchi, K ^a   Nishiyama, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ETCHING; FLUORINE; ION IMPLANTATION; LEAKAGE CURRENTS; NICKEL COMPOUNDS; SILICON NITRIDE; SPUTTERING; THERMAL EFFECTS; THERMODYNAMIC STABILITY; THIN FILMS; SILICIDES;

ATOMIC WEIGHTS; CHEMICAL EFFECTS; JUNCTION FORMATION; THERMAL PROCESSING;

SEMICONDUCTOR JUNCTIONS; ION IMPLANTATION;

FLUORINE IMPLANTATION; IONS IMPLANTATION; LEAKAGE SUPPRESSION; NISI FILMS; ORDERS OF MAGNITUDE; SHALLOW-JUNCTIONS; THERMALLY INDUCED; THERMALLY UNSTABLE;

EID: 21644467234     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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