Mechanism and application of negative charging mode of electron beam inspection for PMOS leakage detection

Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers

Volumn , Issue , 2007, Pages 111-113

  Lai, Li Lung ^a   Xu, Keren ^a   Deng, Daniel ^a   Ning, Jay ^a   Xiao, Hong ^b   Zhao, Yan ^b   Ma, Eric ^b   Jau, Jack ^b  

^a SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

^b Hermes Microvision Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; LEAKAGE CURRENTS; MOS DEVICES; NICKEL COMPOUNDS; STATIC RANDOM ACCESS STORAGE;

DARK VOLTAGE CONTRAST (DVC); ELECTRON BEAM INSPECTION (EBI); NICKEL SUICIDE; PMOS;

ELECTRON BEAMS;

EID: 34748835987     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iitc.2007.382362     Document Type: Conference Paper

References (6)

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