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Volumn 105, Issue 10, 2009, Pages

Thermal probing of energy dissipation in current-carrying carbon nanotubes

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE TEMPERATURE; ELECTRON TRANSPORT; JOULE HEAT; METAL CONTACTS; MULTI-WALLED NANOTUBES; OPTICAL PHONON ENERGIES; SCANNING THERMAL MICROSCOPE; SINGLE-WALLED NANOTUBE; SUBSTRATE INTERFACE; TEMPERATURE PROFILES; VOLTAGE BIAS;

EID: 66549087961     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3126708     Document Type: Article
Times cited : (106)

References (41)
  • 6
    • 0032350984 scopus 로고    scopus 로고
    • 0031-9015,. 10.1143/JPSJ.67.1704
    • T. Ando and T. Nakanishi, J. Phys. Soc. Jpn. 0031-9015 67, 1704 (1998). 10.1143/JPSJ.67.1704
    • (1998) J. Phys. Soc. Jpn. , vol.67 , pp. 1704
    • Ando, T.1    Nakanishi, T.2
  • 11
    • 17944383013 scopus 로고    scopus 로고
    • 0031-9007,. 10.1103/PhysRevLett.84.2941
    • Z. Yao, C. L. Kane, and C. Dekker, Phys. Rev. Lett. 0031-9007 84, 2941 (2000). 10.1103/PhysRevLett.84.2941
    • (2000) Phys. Rev. Lett. , vol.84 , pp. 2941
    • Yao, Z.1    Kane, C.L.2    Dekker, C.3
  • 12
    • 0035957717 scopus 로고    scopus 로고
    • 0036-8075,. 10.1126/science.1058782
    • P. C. Collins, M. S. Arnold, and P. Avouris, Science 0036-8075 292, 706 (2001). 10.1126/science.1058782
    • (2001) Science , vol.292 , pp. 706
    • Collins, P.C.1    Arnold, M.S.2    Avouris, P.3
  • 15
    • 33646237377 scopus 로고    scopus 로고
    • 0163-1829,. 10.1103/PhysRevB.73.165419
    • M. Lazzeri and F. Mauri, Phys. Rev. B 0163-1829 73, 165419 (2006). 10.1103/PhysRevB.73.165419
    • (2006) Phys. Rev. B , vol.73 , pp. 165419
    • Lazzeri, M.1    Mauri, F.2
  • 16
    • 33747722109 scopus 로고    scopus 로고
    • 0031-9007,. 10.1103/PhysRevLett.97.076804
    • L. E. F. Foa Torres and S. Roche, Phys. Rev. Lett. 0031-9007 97, 076804 (2006). 10.1103/PhysRevLett.97.076804
    • (2006) Phys. Rev. Lett. , vol.97 , pp. 076804
    • Foa Torres, L.E.F.1    Roche, S.2
  • 25
    • 0033301083 scopus 로고    scopus 로고
    • 0084-6600,. 10.1146/annurev.matsci.29.1.505
    • A. Majumdar, Annu. Rev. Mater. Sci. 0084-6600 29, 505 (1999). 10.1146/annurev.matsci.29.1.505
    • (1999) Annu. Rev. Mater. Sci. , vol.29 , pp. 505
    • Majumdar, A.1
  • 26
    • 66549118531 scopus 로고    scopus 로고
    • Ph.D. thesis, University of California, Berkeley.
    • L. Shi, Ph.D. thesis, University of California, Berkeley, 2001.
    • (2001)
    • Shi, L.1
  • 27
    • 0036776543 scopus 로고    scopus 로고
    • 0921-4526,. 10.1016/S0921-4526(02)00969-9
    • P. Kim, L. Shi, A. Majumdar, and P. L. McEuen, Physica B 0921-4526 323, 67 (2002). 10.1016/S0921-4526(02)00969-9
    • (2002) Physica B , vol.323 , pp. 67
    • Kim, P.1    Shi, L.2    Majumdar, A.3    McEuen, P.L.4
  • 30
    • 84868941610 scopus 로고    scopus 로고
    • For the ac electrical heating case, Eq. can be solved using the impulse theorem (Refs.) The obtained solution reveals that the characteristic frequency corresponding to the thermal time constant (τNT) of the SWNT is fNT =1/2π τNT = (π k/ L2 +g/π A) /4ρ C. fNT is estimated to be of the order of 1010 Hz using k≈3000 W/m K (Refs.) g≈0.2 W/m K (Refs.), and ρ and C of graphite (Ref.). During electrical heating of the SWNT, appreciable temperature rise is expected to occur in the supporting substrate only within a distance of about 5L from the SWNT. The thermal time constant of the substrate volume with appreciable temperature rise is τsub = (5L) 2 /4α. The upper limit of τsub is about 70 μs based on the smaller thermal diffusivity (α) value of the silicon oxide film and the silicon substrate. This upper limit corresponds to the lower limit of the substrate characteristic frequency of fsub ≈2000 Hz.
    • For the ac electrical heating case, Eq. can be solved using the impulse theorem (Refs.) The obtained solution reveals that the characteristic frequency corresponding to the thermal time constant (τNT) of the SWNT is fNT =1/2π τNT = (π k/ L2 +g/π A) /4ρ C. fNT is estimated to be of the order of 1010 Hz using k≈3000 W/m K (Refs.) g≈0.2 W/m K (Refs.), and ρ and C of graphite (Ref.). During electrical heating of the SWNT, appreciable temperature rise is expected to occur in the supporting substrate only within a distance of about 5L from the SWNT. The thermal time constant of the substrate volume with appreciable temperature rise is τsub = (5L) 2 /4α. The upper limit of τsub is about 70 μs based on the smaller thermal diffusivity (α) value of the silicon oxide film and the silicon substrate. This upper limit corresponds to the lower limit of the substrate characteristic frequency of fsub ≈2000 Hz.
  • 36
    • 66549097156 scopus 로고    scopus 로고
    • note
    • 2 film. When L is only about three times longer than d in our measurements, RS is expected to be slightly smaller than RS,2D because of additional heat spreading to the substrate in the direction along the NT axis.
  • 39
    • 28144450558 scopus 로고    scopus 로고
    • 1530-6984,. 10.1021/nl051710b
    • R. Prasher, Nano Lett. 1530-6984 5, 2155 (2005). 10.1021/nl051710b
    • (2005) Nano Lett. , vol.5 , pp. 2155
    • Prasher, R.1
  • 40


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.