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Materials Transactions

Volumn 50, Issue 4, 2009, Pages 922-925

Optoelectronic characteristics of UV photodetector based on ZnO nanopillar thin films prepared by sol-gel method

(4) Chen, K J a Hung, F Y a Chang, S J a Young, S J a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

Iridium; Nanopillar; Thin film; Zno

Indexed keywords

CRYSTALLIZED STRUCTURE; I-V MEASUREMENTS; NANOPILLAR; NANOPILLAR STRUCTURES; OPTOELECTRONIC CHARACTERISTICS; PURE OXYGEN; QUARTZ SUBSTRATE; SEM; SOL-GEL METHODS; SPIRAL STRUCTURES; UV PHOTODETECTORS; ZNO; ZNO THIN FILM;

GELATION; GELS; IRIDIUM; METALLIC FILMS; OPTICAL FILMS; OPTOELECTRONIC DEVICES; OXIDE MINERALS; OXYGEN; PHOTODETECTORS; QUARTZ; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILM DEVICES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; ZINC OXIDE;

FILM PREPARATION;

EID: 66549085015 PISSN: 13459678 EISSN: None Source Type: Journal
DOI: 10.2320/matertrans.MER2008371 Document Type: Article

Times cited : (18)

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