Proposal for a 50 nm proximity X-ray lithography system and extension to 35 nm by resist material selection

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 2950-2954

  Kitayama, Toyoki ^a   Itoga, Kenji ^a   Watanabe, Yutaka ^b   Uzawa, Shunichi ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b CANON INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ELEMENTS; DOPING (ADDITIVES); LIGHTING; MIRRORS; SYNCHROTRON RADIATION;

CANON STEPPERS;

X RAY LITHOGRAPHY;

EID: 0034314799     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1324644     Document Type: Article

References (11)

1. L. E. Ocola and F. Cerrina, J. Vac. Sci. Technol. B 12, 3986 (1994).
2. M. Khan, G. Han, S. B. Bollepalli, F. Cerrina, and J. Maldonado, J. Vac. Sci. Technol. B 17, 3426 (1999).
3. J. P. Silverman, J. Vac. Sci. Technol. B 15, 2117 (1997).
4. T. Kaneko, Y. Saitoh, S. Itabashi, and H. Yoshihara, J. Vac. Sci. Technol. B 15, 3214 (1997).
5. Y. Watanabe, S. Hara, N. Mizusawa, Y. Fukuda, and S. Uzawa, J. Vac. Sci. Technol. B 15, 2503 (1997).
6. M. Khan, P. Anderson, and F. Cerrina, Proc. SPIE 1465, 315 (1991); M. Khan, L. Mohammad, J. Xiao, L. Ocola, and F. Cerrina, J. Vac. Sci. Technol. B 12, 3930 (1994).
7. M. Khan, P. Anderson, and F. Cerrina, Proc. SPIE 1465, 315 (1991); M. Khan, L. Mohammad, J. Xiao, L. Ocola, and F. Cerrina, J. Vac. Sci. Technol. B 12, 3930 (1994).
8. K. Deguchi et al., J. Vac. Sci. Technol. B 14, 4294 (1996).
9. S. Hector et al., J. Vac. Sci. Technol. B 15, 2517 (1997); K. Fujii et al., ibid. 16, 3504 (1998).
10. S. Hector et al., J. Vac. Sci. Technol. B 15, 2517 (1997); K. Fujii et al., ibid. 16, 3504 (1998).
11. S. Tanuma, C. J. Powell, and D. R. Penn, Surf. Interface Anal. 21, 165 (1993).